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| ON Semiconductort SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10009 Darlington transistor is designed for high-voltage, high-speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: MJ10009 * *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS * * * * * * * Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn-Off Times 1.6 s (max) Inductive Crossover Time - 10 A, 100_C 3.5 s (max) Inductive Storage Time - 10 A, 100_C Operating Temperature Range -65 to +200_C 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 1-07 TO-204AA (TO-3) II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS 100 15 Rating Symbol VCEO Value 500 500 700 8 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage VCEX VCEV VEB IC ICM IB IBM PD Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) 20 30 2.5 5 Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C 175 100 1 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200IIII _C THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max 1 Unit Thermal Resistance, Junction to Case _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 275 (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 4 Publication Order Number: MJ10009/D II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I III I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII II II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. (1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. (2) Pulse Test: PW = 300 s, Duty Cycle 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) SECOND BREAKDOWN OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Crossover Time Storage Time Crossover Time Storage Time Inductive Load, Clamped (Table 1) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Small-Signal Current Gain (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Diode Forward Voltage (1) (IF = 10 Adc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 500 mAdc) (IC = 10 Adc, IB = 500 mAdc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 500 mAdc) (IC = 20 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 500 mAdc, TC = 100_C) DC Current Gain (IC = 5 Adc, VCE = 5 Vdc) (IC = 10 Adc, VCE = 5 Vdc) Second Breakdown Collector Current with base forward biased Emitter Cutoff Current (VEB = 2 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Emitter Sustaining Voltage (Table 1, Figure 12) (IC = 2 A, Vclamp = Rated VCEX, TC = 100_C, VBE(off) = 5 V) (IC = 10 A, Vclamp = Rated VCEX, TC = 100_C, VBE(off) = 5 V) Collector Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0, Vclamp = Rated VCEO) (IC = 10 A( k), Vclamp = 250 V, IB1 = 500 mA, A(pk), clam VBE(off) = 5 Vdc) (IC = 10 A( k), Vclamp = 250 V, IB1 = 500 mA, A(pk), clam VBE(off) = 5 Vdc, TC = 100_C) (VCC = 250 Vdc, IC = 10 A, IB1 = 500 mA VBE( ff) = 5 Vdc, tp = 25 s mA, BE(off) Vdc Duty Cycle v 2%). Characteristic http://onsemi.com MJ10009 2 VCEO(sus) VCEX(sus) Symbol VCE(sat) VBE(sat) IEBO ICER ICEV Cob hFE IS/b hfe tsv tsv Vf td tc ts tr tf tc Min 100 500 375 500 40 30 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8 See Figure 11 0.18 0.36 0.12 Typ 0.8 1.5 0.2 0.8 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3 0.25 0.25 5 Max 325 400 300 175 1.6 3.5 0.6 2.0 1.5 2.5 2.5 2 3.5 2.5 -- -- -- -- -- -- 5 5 mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc pF s s s s s s s s -- -- MJ10009 TYPICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 400 TJ = 150C 3 2.6 2.2 1.8 1.4 1 0.03 hFE, DC CURRENT GAIN 200 IC = 5 A 10 A 20 A 100 60 40 VCE = 5 V 20 0.2 0.5 25C TJ = 25C 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) 1 2 3 1 2 5 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 1. DC Current Gain Figure 2. Collector Saturation Region 2.4 2 V, VOLTAGE (VOLTS) 1.6 1.2 0.8 0.4 TJ = - 55C 25C 150C 0.2 0.3 0.5 0.7 1 2 5 3 7 IC, COLLECTOR CURRENT (AMP) 10 20 IC/IB = 10 V, VOLTAGE (VOLTS) 2.8 2.4 2 1.6 1.2 0.8 0.2 0.3 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3 V TJ = - 55C 25C 25C 150C 0.5 0.7 1 2 3 57 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage 104 VCE = 250 V 103 102 101 REVERSE 100 10-1 25C 0 +0.2 +0.4 +0.6 +0.8 TJ = 125C 100C 75C FORWARD 1000 Cob , OUTPUT CAPACITANCE (pF) 700 500 300 200 TJ = 25C 100 70 50 0.4 0.6 1 2 4 6 10 20 Cob -0.2 40 60 100 200 400 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Output Capacitance http://onsemi.com 3 MJ10009 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING + V DRIVE DRIVER SCHEMATIC 20 1 For inductive loads pulse width is adjusted to obtain specified IC 2N3762 2 HP214 PW Varied to Attain IC = 100 mA - 38 V 50 0.05 F 2.0 F + 100 MTP3055E - Voff DRIVE 50 + PG IN 10 F 10 10 0.005 MTP3055E 1 2 0.005 F 10 RB IB1 1 2 RESISTIVE SWITCHING INPUT CONDITIONS 0 IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. CIRCUIT VALUES Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) Lcoil = 180 H Rcoil = 0.05 VCC = 20 V Vclamp = Rated VCEX Value 1000 VCC = 250 V RL = 25 Pulse Width = 25 s INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS t1 Adjusted to Obtain IC t1 t2 Lcoil (IC ) pk RESISTIVE TEST CIRCUIT TEST CIRCUITS 1 TUT 1N4937 OR EQUIVALENT Vclamp RS = 0.1 IC Rcoil Lcoil VCC VCE VCE or Vclamp TIME t1 tf IC(pk) tf UNCLAMPED [ t2 TUT 1 2 RL VCC INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 tf CLAMPED t VCC Lcoil (IC ) pk VClamp Test Equipment Scope -- Tektronix 475 or Equivalent t2 t ICM 90% VCEM IC tsv trv tc VCE IB 90% IB1 10% VCEM VCEM 90% ICM tfi tti Vclamp 10% ICM 2% IC measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10-90% Vclamp tfi = Current Fall Time, 90-10% IC tti = Current Tail, 10-2% IC tc = Crossover Time, 10% Vclamp to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222. PSWT = 1/2 VCC IC (tc) f Figure 7. Inductive Switching Measurements TIME SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate Typical inductive switching waveforms are shown in Figure 7. In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. http://onsemi.com 4 MJ10009 RESISTIVE SWITCHING PERFORMANCE 2 tP = 25 s, DUTY CYCLE v 2% 1 t, TIME ( s) VCC = 250 V IC/IB = 20 TJ = 25C tr 0.5 t, TIME ( s) 1.0 VCC = 250 V IC/IB = 20 VBE(off) = 5 V TJ = 25C ts 0.5 0.2 tP = 25 s, DUTY CYCLE v 2% tf 0.2 td 0.1 1 2 5 10 IC, COLLECTOR CURRENT (AMP) 20 0.1 0.05 1 2 5 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 8. Turn-On Time Figure 9. Turn-Off Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) P(pk) ZJC (t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 5.0 10 20 50 t2 DUTY CYCLE, D = t1/t2 100 200 500 1k t1 Figure 10. Thermal Response http://onsemi.com 5 MJ10009 The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS IC, COLLECTOR CURRENT (AMP) 50 20 10 5 100 s 10 s 2 1 0.5 1 ms dc BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 6 10 20 50 100 0.2 0.1 0.05 0.02 0.01 0.005 MJ10009 200 450 600 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS IC, COLLECTOR CURRENT (AMP) 20 18 16 14 12 10 8 6 4 2 0 0 VBE(off) = 5 V VBE(off) = 2 V VBE(off) = 0 V 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 TC = 100C IC/IB1 20 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as VCEX(sus) at a given collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area characteristics. See Table 1 for circuit conditions. Figure 12. Reverse Bias Switching Safe Operating Area (MJ10009) 100 POWER DERATING FACTOR (%) IB2(pk) , BASE CURRENT (AMP) 80 60 40 20 0 THERMAL DERATING FORWARD BIAS SECOND BREAKDOWN DERATING 10 7 5 IC = 10 A 2 0 SEE TABLE 1 FOR CONDITIONS, FIGURE 7 FOR WAVESHAPE. 0 1 2 5 7 VBE(off), REVERSE BASE CURRENT (VOLTS) 8 0 40 80 120 160 TC, CASE TEMPERATURE (C) 200 Figure 13. Power Derating Figure 14. Reverse Base Current versus VBE(off) with No External Base Resistance http://onsemi.com 6 MJ10009 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 K M 0.13 (0.005) U V 2 TQ M Y M L G 1 -Y- H B -Q- 0.13 (0.005) M TY M http://onsemi.com 7 MJ10009 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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